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- Weebit Nano (WBT) has created the industry’s first commercial integration of an oxide-based ReRAM cell for the stand-alone memory market, three months ahead of schedule
- The cell has an ovonic threshold switching selector, which the company says is a critical step in its commercialisation path for the stand-alone memory market
- The news come three months ahead of its previously announced schedule, offering endurance, low energy consumption and high switching speed
- Weebit Nano last traded at $1.59 on June 24
Weebit Nano (WBT) has created the industry’s first commercial integration of an oxide-based ReRAM cell for the stand-alone memory market, ahead of schedule.
The cell has an ovonic threshold switching selector, which the memory technology company says is a critical step in its commercialisation path for the stand-alone memory market.
A selector is a key element of a memory chip, enabling optimised cell access within a memory array. It assists in isolating memory cells so only specific cells are assessed, without impacting others.
The news come three months ahead of its previously announced schedule, while offering endurance, low energy consumption and high switching speed.
The company says this is a significant step towards broadening its target market beyond embedded non-volatile memory to include discrete memory technology. It will also enable 3D memory stacking to be implemented, and crossbar architectures in future developments.
“This achievement demonstrates our commitment to addressing the discrete memory market as part of our mid-term strategy,” CEO of Weebit Coby Hanoch said.
“We see a broad range of opportunities for discrete ReRAM, from NOR flash to storage class memory, in a range of segments.
“Given our 2024 target for a discrete solution, we anticipate that other opportunities will arise as well.”
Weebit Nano last traded at $1.59 on June 24.
