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- 4DS Memory (4DS) has secured another U.S. patent, bringing its intellectual property portfolio to 23 patents
- The patent, ‘Resistive Memory Device Having a Template Layer,’ relates to the company’s Interface Switching ReRAM technology
- This high-speed Storage Class Memory has a read speed comparable to dynamic random access memory, or DRAM
- 4DS Memory has already filed another nine patent applications in the U.S.
- Company shares are up 3.4 per cent and trading for 3.4 cents each
4DS Memory (4DS) has secured another U.S. patent, bringing its American intellectual property portfolio to 23.
The semiconductor development company is working to pioneer Interface Switching ReRAM for gigabyte storage for both mobile and cloud.
The latest granted patent, ‘Resistive Memory Device Having a Template Layer,’ relates to the company’s Interface Switching ReRAM technology.
This high-speed Storage Class Memory has a read speed comparable to dynamic random access memory (DRAM) without error correction, which 4DS Memory pioneered as an industry first for ReRAM technology in 2017.
Storage Class Memory is a form of non-volatile memory that sits somewhere between DRAM, which is known for its speed and endurance, and NAND Flash, characterised by its cost and retention.
Chief Executive Officer and Managing Director Dr Guido Arnout welcomed news of the granted patent, which was placed on a fast track granting process.
“The board and management of 4DS Memory are extremely pleased with the grant of this patent as it again reinforces the uniqueness and importance of the company’s technology in the ReRAM field.”
In addition, the company has filed another nine patent application in the U.S. which all relate to Interface Switching ReRAM for Storage Class Memory comparable to DRAM. If they are all granted, it would bring the 4DS Memory’s intellectual property portfolio to 32 patents.
Shares in 4DS Memory are up 3.4 per cent and trading for 3.4 cents each at 2:36 pm AEST.
